TFH2412 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFH2412
SMD Transistor Code: MA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT363
TFH2412 Transistor Equivalent Substitute - Cross-Reference Search
TFH2412 Datasheet (PDF)
tfh2412.pdf
Tin Far Electronic CO.,LTD Page No: 1/5TFH2412 Features Two TFS2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Low Cob. Typ. Cob=2.0pF Complementary to TFH1037 Pb-free package Equivalent Circuit
tfh2411.pdf
Tin Far Electronic CO.,LTD Page No: 1/5 TFH2411 Features Two TFS2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. High IC(Max) . IC (Max) = 0.6A Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA O
tfh2444.pdf
Tin Far Electronic CO.,LTD Page No: 1/5 TFH2444 (Dual Transistors) Features Two BTD2444 chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Pb-fr
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
