2N6737 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N6737
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
2N6737 Transistor Equivalent Substitute - Cross-Reference Search
2N6737 Datasheet (PDF)
2n6716 2n6717 2n6718 2n6728 2n6729 2n6730.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n6732.pdf
PNP SILICON PLANAR2N6732MEDIUM POWER TRANSISTORISSUE 1 MARCH 94 T 8 V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I
2n6731.pdf
NPN SILICON PLANAR2N6731MEDIUM POWER TRANSISTORISSUE 1 MARCH 94 T 8 V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I I V I II i V 8 V I I V I i V V I I
2n6728 2n6729 2n6730.pdf
PNP SILICON PLANAR 2N67282N6729MEDIUM POWER TRANSISTORS2N6730ISSUE 1 MARCH 94 T V I V i I E-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I
2n6738 2n6739 2n6740.pdf
ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6738.pdf
isc Silicon NPN Power Transistor 2N6738DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , power switc-hing in inductive circuit , they are particularly suited for
2n6738 2n6739 2n6740.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION With TO-220 package High voltage ratings Low collector saturation voltage Fast switching speed APPLICATIONS Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION1 Base Co
2n6739.pdf
isc Silicon NPN Power Transistor 2N6739DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , power switc-hing in inductive circuit , they are particularly suited for
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
