TSC5304DCH
Datasheet, Equivalent, Cross Reference Search
Type Designator: TSC5304DCH
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35
W
Maximum Collector-Base Voltage |Vcb|: 700
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 9
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package:
TO251
TSC5304DCH
Transistor Equivalent Substitute - Cross-Reference Search
TSC5304DCH
Datasheet (PDF)
6.1. Size:203K taiwansemi
tsc5304d.pdf 
TSC5304D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1.5V @ IC / IB = 4A / 1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable S
7.1. Size:261K taiwansemi
tsc5304ed.pdf
TSC5304ED High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base 2. Collector BVCEO 400V 3. Emitter BVCBO 700V IC 4A VCE(SAT) 0.25V (Typ.) @ IC=0.5A, IB=0.1A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation Low Base Drive Requirement Suitable for Half
8.1. Size:374K taiwansemi
tsc5303d.pdf
TSC5303D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 3A VCE(SAT) 0.17V @ IC=1A, IB=0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Because of Low Variable
8.2. Size:401K taiwansemi
tsc5301dct.pdf
TSC5301D High Voltage NPN Transistor with Diode TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter BVCEO 400V 2. Collector 3. Base BVCBO 700V IC 1A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variable Storage-time Spread E
8.3. Size:233K taiwansemi
tsc5302d.pdf
TSC5302D High Voltage NPN Transistor with Diode TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 2A VCE(SAT) 1.1V @ IC / IB = 1A / 0.25A Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti-saturation Operation No Need to Interest an hfe Value Because of Low Variab
Datasheet: 2SA1803O
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, 2SA1805R
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