TFN2444 Specs and Replacement
Type Designator: TFN2444
SMD Transistor Code: BS
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Package: SOT23
TFN2444 Substitution
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TFN2444 datasheet
Tin Far Electronic CO.,LTD Page No 1/5 TFN2444 Features The TFN2444 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free package Symbol Outline TFN2444 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings (Ta=25 C) ... See More ⇒
Tin Far Electronic CO.,LTD Page No 2/6 Characteristics (Ta=25 C) Symbol Min. Typ. Max. Unit Test Conditions BV 75 - - V I =10 A CBO C BV 40 - - V I =10mA CEO C BV 6 - - V I =10 A EBO E I - - 10 nA V =60V CBO CB I - - 10 nA V =60V, V =-3V CEX CE BE I - - 10 nA V =3V EBO EB *V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B *V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B *... See More ⇒
Tin Far Electronic CO.,LTD Page No 1/5 TFN2412 50V 150mA NPN TRANSISTOR Description The TFN2412 is designed for using in driver stage of AF amplifier and general purpose switching application. Low Cob, typically Cob=2.0pF Complementary to TFN1037 Pb-free package Symbol Outline TFN2412 SOT-23 B Base C Collector E Emitter Absolute Maximum Ratings... See More ⇒
Detailed specifications: TSC5304DCP, TSC5304EDCH, TSC5304EDCP, TSC5327CZ, TFN2059, TFN2150, TFN2411, TFN2412, A42, TFN3838, TFN3906, TFN4061, TFN4505, TFN5094, TS13002ACT, TS13002CT, TS13003BCT
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History: CJD350
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