All Transistors. TFN2444 Datasheet

 

TFN2444 Datasheet and Replacement


   Type Designator: TFN2444
   SMD Transistor Code: BS
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: SOT23
 

 TFN2444 Substitution

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TFN2444 Datasheet (PDF)

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TFN2444

Tin Far Electronic CO.,LTD Page No: 1/5 TFN2444 Features The TFN2444 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free package Symbol OutlineTFN2444 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C)

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TFN2444

Tin Far Electronic CO.,LTDPage No: 2/6Characteristics (Ta=25C)Symbol Min. Typ. Max. Unit Test ConditionsBV 75 - - V I =10A CBO CBV 40 - - V I =10mA CEO CBV 6 - - V I =10A EBO EI - - 10 nA V =60V CBO CBI - - 10 nA V =60V, V =-3V CEX CE BEI - - 10 nA V =3V EBO EB*V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B*V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B*

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TFN2444

Tin Far Electronic CO.,LTDPage No: 1/5TFN2412 50V 150mA NPN TRANSISTOR Description The TFN2412 is designed for using in driver stage of AF amplifier and general purpose switching application. Low Cob, typically Cob=2.0pF Complementary to TFN1037 Pb-free packageSymbol OutlineTFN2412 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings

Datasheet: TSC5304DCP , TSC5304EDCH , TSC5304EDCP , TSC5327CZ , TFN2059 , TFN2150 , TFN2411 , TFN2412 , 2N2907 , TFN3838 , TFN3906 , TFN4061 , TFN4505 , TFN5094 , TS13002ACT , TS13002CT , TS13003BCT .

History: 2SC1030B | DTA123EUA | DS15 | DTA115EUA | 2SC2873O-G | BSW64 | NSS12100XV6T1G

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