TFN2444 Datasheet, Equivalent, Cross Reference Search
Type Designator: TFN2444
SMD Transistor Code: BS
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT23
TFN2444 Transistor Equivalent Substitute - Cross-Reference Search
TFN2444 Datasheet (PDF)
tfn2444.pdf
Tin Far Electronic CO.,LTD Page No: 1/5 TFN2444 Features The TFN2444 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-free package Symbol OutlineTFN2444 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings (Ta=25C)
tfn2411.pdf
Tin Far Electronic CO.,LTDPage No: 2/6Characteristics (Ta=25C)Symbol Min. Typ. Max. Unit Test ConditionsBV 75 - - V I =10A CBO CBV 40 - - V I =10mA CEO CBV 6 - - V I =10A EBO EI - - 10 nA V =60V CBO CBI - - 10 nA V =60V, V =-3V CEX CE BEI - - 10 nA V =3V EBO EB*V 1 - - 0.5 V I =380mA, I =10mA CE(sat) C B*V 2 - - 0.4 V I =150mA, I =15mA CE(sat) C B*
tfn2412.pdf
Tin Far Electronic CO.,LTDPage No: 1/5TFN2412 50V 150mA NPN TRANSISTOR Description The TFN2412 is designed for using in driver stage of AF amplifier and general purpose switching application. Low Cob, typically Cob=2.0pF Complementary to TFN1037 Pb-free packageSymbol OutlineTFN2412 SOT-23 BBase CCollector EEmitter Absolute Maximum Ratings
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
