All Transistors. TS13005CI Datasheet

 

TS13005CI Datasheet and Replacement


   Type Designator: TS13005CI
   SMD Transistor Code: TSC13005
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO220F
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TS13005CI Datasheet (PDF)

 0.1. Size:361K  taiwansemi
 ts13005ci-cz.pdf pdf_icon

TS13005CI

TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

 6.1. Size:374K  taiwansemi
 ts13005ck.pdf pdf_icon

TS13005CI

TS13005CK Taiwan Semiconductor High Voltage NPN Transistor FEATURES KEY PERFORMANCE PARAMETERS Low spread of dynamic parameters PARAMETER VALUE UNIT High switching speed BVCEO 400 V Low base drive requirement BVCBO 700 V Compliant to RoHS Directive 2011/65/EU and in IC 3 A accordance to WEEE 2002/96/EC. Halogen-free according to IEC 61249-2-21 VCE

 7.1. Size:364K  taiwansemi
 ts13005 b07.pdf pdf_icon

TS13005CI

TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Base BVCEO 400V 2. Collector 3. Emitter BVCBO 700V IC 4A VCE(SAT) 1V @ IC / IB = 4A / 1A Features Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. Package Packing

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History: 2N5401YTA | 2SD2352 | 3DD13005_F8-1 | HSD882

Keywords - TS13005CI transistor datasheet

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