2N6752 Specs and Replacement
Type Designator: 2N6752
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
2N6752 Substitution
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2N6752 datasheet
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6751 2N6752 DESCRIPTION With TO-3 package High breakdown voltage Low saturation voltage Fast switching speed APPLICATIONS Off-line power supplies High-voltage inverters Switching regulators PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 ... See More ⇒
PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process... See More ⇒
PD - 90334F IRF230 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6758 HEXFET TRANSISTORS JANTXV2N6758 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF230 200V 0.40 9.0A TO-3 The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique... See More ⇒
Detailed specifications: 2N6736, 2N6737, 2N6738, 2N6739, 2N674, 2N6740, 2N675, 2N6751, TIP41C, 2N6753, 2N6754, 2N676, 2N677, 2N6771, 2N6772, 2N6773, 2N6774
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History: BDS28BSM | BSV15-16 | 2N160A | EFT319 | 2PD1820A | LMBT2907ALT1G | 2N1619
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