TSB1184CP Datasheet, Equivalent, Cross Reference Search
Type Designator: TSB1184CP
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 80 MHz
Collector Capacitance (Cc): 55 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO252
TSB1184CP Transistor Equivalent Substitute - Cross-Reference Search
TSB1184CP Datasheet (PDF)
tsb1184cp.pdf
TSB1184 Low Vcesat PNP Transistor TO-252 Pin Definition: PRODUCT SUMMARY (DPAK) 1. Base 2. Collector BVCBO -40V 3. Emitter BVCEO -30V IC -3A VCE(SAT) -0.3V @ IC / IB = -2A / -100mA Features Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Part No. Package Packing Excellent DC current gain characteristics TSB1184CP RO TO-252 2.5Kpcs
tsb1184acp.pdf
TSB1184A Low Vcesat PNP Transistor TO-252 Pin Definition: PRODUCT SUMMARY (DPAK) 1. Base 2. Collector BVCBO -50V 3. Emitter BVCEO -50V IC -3A VCE(SAT) -0.3V @ IC / IB = -2A / -100mA Features Ordering Information Low VCE(SAT) -0.3V @ IC / IB = -2A / -100mA (Typ.) Part No. Package Packing Excellent DC current gain characteristics TSB1184ACP RO TO-252 2.5Kpc
tsb1132cy.pdf
TSB1132 Low Vcesat PNP Transistor SOT-89 Pin Definition: PRODUCT SUMMARY 1. Base BVCBO -40V 2. Collector 3. Emitter BVCEO -32V IC -1A VCE(SAT) -0.15V @ IC / IB = -0.5A / -50mA Features Ordering Information Low VCE(SAT) -0.15 @ IC / IB = --.5A / -50mA (Typ.) Part No. Package Packing Excellent DC current gain characteristics TSB1132CY RM SOT-89 1Kpcs / 7 R
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
