TPV595A Datasheet and Replacement
Type Designator: TPV595A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50
W
Maximum Collector-Base Voltage |Vcb|: 45
V
Maximum Collector-Emitter Voltage |Vce|: 28
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 2000
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: BMA2
TPV595A Transistor Equivalent Substitute - Cross-Reference Search
TPV595A Datasheet (PDF)
9.1. Size:83K motorola
tpv598re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV598/D The RF Line UHF Linear Power Transistor TPV598 Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC... See More ⇒
9.3. Size:98K motorola
tpv596a.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz) ... See More ⇒
9.4. Size:94K motorola
tpv596ar.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz) ... See More ⇒
9.5. Size:243K hgsemi
tpv598.pdf 

HG RF POWER TRANSISTOR TPV598 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC High Gain 7.0 dB Min... See More ⇒
9.6. Size:241K hgsemi
tpv591.pdf 

HG RF POWER TRANSISTOR TPV591 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HG TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE Gold Metalization Emitter Ballasting MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3 W @ TC = 25 OC O TJ -... See More ⇒
9.7. Size:245K hgsemi
tpv593.pdf 

HG RF POWER TRANSISTOR TPV593 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HGTPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. FEATURES INCLUDE Gold Metalization Emitter Ballasting High Gain MAXIMUM RATINGS IC 1.2 A VCB 45 V PDISS 17... See More ⇒
9.8. Size:272K hgsemi
tpv597.pdf 

HG RF POWER TRANSISTOR TPV597 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 1.0 W Pref @ 58 dB IMD 20 V VCC High Gain 11 d... See More ⇒
Datasheet: TSB772CK
, TSB772SCT
, TPV385
, TPV394
, TPV5051
, TPV591
, TPV593
, TPV595
, 2N2907
, TPV596A
, TPV597
, TPR175
, TSC123JNND03
, TSC124ENND03
, TSC128DCZ
, TSC128DCM
, TSC136CZ
.
History: TP834
| 2SA1576AQT1
| IMX25
| ASY28RT
| 2SC3181NO
| TP3962
| 2SC4186
Keywords - TPV595A transistor datasheet
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