TPV595A Datasheet. Specs and Replacement
Type Designator: TPV595A 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 2000 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: BMA2
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TPV595A datasheet
9.1. Size:83K motorola
tpv598re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV598/D The RF Line UHF Linear Power Transistor TPV598 Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC... See More ⇒
9.3. Size:98K motorola
tpv596a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz) ... See More ⇒
9.4. Size:94K motorola
tpv596ar.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by TPV596A/D The RF Line UHF Linear Power Transistor TPV596A . . . designed for very high output 1.5 V MATV amplifiers up to 860 MHz and 500 mW Band V TV transposer stages. Gold metallization and diffused emitter ballast resistors are used to enhanced reliability, ruggedness and linearity. Band IV and V (470 860 MHz) ... See More ⇒
9.5. Size:243K hgsemi
tpv598.pdf
HG RF POWER TRANSISTOR TPV598 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 4.0 W Pref @ 60 dB IMD 25 V VCC High Gain 7.0 dB Min... See More ⇒
9.6. Size:241K hgsemi
tpv591.pdf
HG RF POWER TRANSISTOR TPV591 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HG TPV591 is a Common Emitter Device Designed for High Linearity Class A Television Band IV and V Transmitters. FEATURES INCLUDE Gold Metalization Emitter Ballasting MAXIMUM RATINGS IC 300 mA VCB 45 V PDISS 5.3 W @ TC = 25 OC O TJ -... See More ⇒
9.7. Size:245K hgsemi
tpv593.pdf
HG RF POWER TRANSISTOR TPV593 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HGTPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. FEATURES INCLUDE Gold Metalization Emitter Ballasting High Gain MAXIMUM RATINGS IC 1.2 A VCB 45 V PDISS 17... See More ⇒
9.8. Size:272K hgsemi
tpv597.pdf
HG RF POWER TRANSISTOR TPV597 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 1.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused emitter ballast resistors are used to enhance reliability, ruggedness and linearity. Band IV and V (470 860 MHz) 1.0 W Pref @ 58 dB IMD 20 V VCC High Gain 11 d... See More ⇒
Detailed specifications: TSB772CK, TSB772SCT, TPV385, TPV394, TPV5051, TPV591, TPV593, TPV595, 2N2907, TPV596A, TPV597, TPR175, TSC123JNND03, TSC124ENND03, TSC128DCZ, TSC128DCM, TSC136CZ
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