TSC143TNND03 Datasheet, Equivalent, Cross Reference Search
Type Designator: TSC143TNND03
SMD Transistor Code: 3
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: WBFBP-03B
TSC143TNND03 Transistor Equivalent Substitute - Cross-Reference Search
TSC143TNND03 Datasheet (PDF)
tsc143tnnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC143TNND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. COLLECTOR without connecting external input
tsc143ennd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B TSC143ENND03 TRANSISTOR (1.21.20.5) TOP unit: mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an inverter circuit BACK 3. OUT without connecting external input resistors (se
tsc148d.pdf
TSC148D High Voltage Fast-Switching NPN Power Transistor TO-220 ITO-220 TO-263 Pin Definition: PRODUCT SUMMARY (D2PAK) 1. Base 400V BVCEO 2. Collector 3. Emitter 700V BVCBO 8A IC 1.5V @ IC / IB = 5A / 1A VCE(SAT) Features Block Diagram Build-in Free-wheeling Diode Makes Efficient Anti- saturation Operation No Need to Interest an hfe Value Becaus
tsc1417.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 TSC1417 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-B
tsc144ennd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC144ENND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit2. GND without connecting external input resistors (see equivalent ci
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N2266 | UMC3N | 2SD1393
