TSA114TNND03 Datasheet, Equivalent, Cross Reference Search
Type Designator: TSA114TNND03
SMD Transistor Code: 94
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: WBFBP-03B
TSA114TNND03 Transistor Equivalent Substitute - Cross-Reference Search
TSA114TNND03 Datasheet (PDF)
tsa114tnnd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA114TNND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION PNP Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit2. GND without connecting external input resistors (see equivalent cir
tsa114ennd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA114ENND03 TRANSISTOR WBFBP-03B (1.21.20.5) TOP unit: mm DESCRIPTION PNP Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter 2. GND circuit without connecting external input resistors BACK 3. OUT
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
