TSA124ENND03 Datasheet, Equivalent, Cross Reference Search
Type Designator: TSA124ENND03
SMD Transistor Code: 15
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 10
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package: WBFBP-03B
TSA124ENND03 Transistor Equivalent Substitute - Cross-Reference Search
TSA124ENND03 Datasheet (PDF)
tsa124ennd03.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA124ENND03 TRANSISTOR WBFBP-03B TOP (1.21.20.5) DESCRIPTION unit: mm PNP Digital Transistor I G O FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit 1. IN without connecting external input resistors (see equivalent circuit)2. GND
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .