All Transistors. TSA124ENND03 Datasheet

 

TSA124ENND03 Datasheet, Equivalent, Cross Reference Search


   Type Designator: TSA124ENND03
   SMD Transistor Code: 15
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 56
   Noise Figure, dB: -
   Package: WBFBP-03B

 TSA124ENND03 Transistor Equivalent Substitute - Cross-Reference Search

   

TSA124ENND03 Datasheet (PDF)

 ..1. Size:337K  jiangsu
tsa124ennd03.pdf

TSA124ENND03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSA124ENND03 TRANSISTOR WBFBP-03B TOP (1.21.20.5) DESCRIPTION unit: mm PNP Digital Transistor I G O FEATURES 1) Built-in bias resistors enable the configuration of an inverter circuit 1. IN without connecting external input resistors (see equivalent circuit)2. GND

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: EN708 | S9016LT1

 

 
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