TPT5609-C Datasheet. Specs and Replacement
Type Designator: TPT5609-C 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 190 MHz
Collector Capacitance (Cc): 22 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: TO92L
TPT5609-C Substitution
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TPT5609-C datasheet
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth TPT5609 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Excellent linearity of Current Gain NPN Epitaxial Low saturation voltage Silicon Transistor Maximum Ratings Symbol Rating Rating Unit TO-92L VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 25 V ... See More ⇒
TPT5609 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage Complementary to TPT5610 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO 25 V Collector- Base Voltage 14.200 VCEO 20 V ... See More ⇒
TPT5610 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features Excellent linearity of Current Gain 7.800 8.200 Low saturation voltage 0.600 Complementary to TPT5609 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO -25 V Collector- Base Voltage 14.200 VCEO -20 ... See More ⇒
Detailed specifications: TSA143ZNND03, TSA1765CW, TSA5888CY, TSA874CW, TSA884CX, TSA894CT, TPT5609-A, TPT5609-B, BC337, TSC10CT, TSC114ENND03, TSC114TNND03, TSC114YNND03, TSC1203ECM, TP9383, TP749, TP3020A
Keywords - TPT5609-C pdf specs
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History: D11C1053
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