TSC114ENND03 Datasheet. Specs and Replacement
Type Designator: TSC114ENND03 📄📄
SMD Transistor Code: 24
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: WBFBP-03B
TSC114ENND03 Substitution
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TSC114ENND03 datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O TSC114ENND03 TRANSISTOR WBFBP-03B (1.2 1.2 0.5) TOP unit mm DESCRIPTION NPN Digital Transistor I G O FEATURES 1. IN 1) Built-in bias resistors enable the configuration of an inverter circuit 2. GND without connecting external input resistors (see equivalent ci... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors O WBFBP-03B (1.2 1.2 0.5) TSC114YNND03 TRANSISTOR TOP unit mm DESCRIPTION I G NPN Digital Transistor O 1. IN FEATURES 2. GND 1) Built-in bias resistors enable the configuration of an BACK 3. OUT without connecting external input ... See More ⇒
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B TSC114TNND03 TRANSISTOR (1.2 1.2 0.5) TOP unit mm DESCRIPTION B E NPN Digital Transistor C 1. BASE FEATURES 2. EMITTER 1) Built-in bias resistors enable the configuration of an inverter circuit BACK without connecting external input resistors (see ... See More ⇒
Detailed specifications: TSA5888CY, TSA874CW, TSA884CX, TSA894CT, TPT5609-A, TPT5609-B, TPT5609-C, TSC10CT, 2SA1943, TSC114TNND03, TSC114YNND03, TSC1203ECM, TP9383, TP749, TP3020A, TP5002, TP5002S
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