TP5002 Datasheet and Replacement
Type Designator: TP5002
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: 244C-01
TP5002 Substitution
TP5002 Datasheet (PDF)
tp5002.pdf

HG RF POWER TRANSISTORTP5002SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.com
tp5002sr.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby TP5002S/DThe RF LineUHF Linear Power TransistorTP5002SThe TP5002S is an NPN gold metallized transistor using diffused ballastresistors for reliability and ruggedness. The TP5002S was specifically designedas a low power driver with high gain and can be operated in Class A, B or C. 380512 MHz 1.5 W Pout
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BC358 | MJE4353 | SU111 | BF680 | 2SB1706 | SU378 | PEMD16
Keywords - TP5002 transistor datasheet
TP5002 cross reference
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History: BC358 | MJE4353 | SU111 | BF680 | 2SB1706 | SU378 | PEMD16



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