NSVT3904DXV6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVT3904DXV6T1G
SMD Transistor Code: MA
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT563
NSVT3904DXV6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSVT3904DXV6T1G Datasheet (PDF)
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Dual General PurposeTransistorNST3904DXV6T1G,NSVT3904DXV6T1G,NST3904DXV6T5Gwww.onsemi.comThe NST/NSV3904DXV6 device is a spin-off of our popularSOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563(3) (2) (1)six-leaded surface mount package. By putting two discrete devices inone package, this device is ide
nsvt3904dxv6t1g.pdf
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NST3904DXV6T1,NSVT3904DXV6T1,NST3904DXV6T5,SNST3904DXV6T5Dual General Purposehttp://onsemi.comTransistorThe NST3904DXV6T1 device is a spin-off of our popular(3) (2) (1)SOT-23/SOT-323 three-leaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT-563six-leaded surface mount package. By putting two discrete devices in Q1 Q2one packag
nsvt3904dp6t5g.pdf
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NST3904DP6T5GDual General PurposeTransistorThe NST3904DP6T5G device is a spin-off of our popularSOT-23/SOT-323/SOT-563 three-leaded device. It is designed forgeneral purpose amplifier applications and is housed in the SOT-963six-leaded surface mount package. By putting two discrete devices inone package, this device is ideal for low-power surface mounthttp://onsemi.comapplicat
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .