2N677A Datasheet and Replacement
Type Designator: 2N677A
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 100 °C
Transition Frequency (ft): 0.2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
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2N677A Datasheet (PDF)
2n6770 irf450.pdf

PD - 90330FREPETITIVE AVALANCHE AND dv/dt RATED IRF450HEXFETTRANSISTORS JANTX2N6770THRU-HOLE (TO-204AA/AE) JANTXV2N6770500V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF450 500V 0.400 12AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestS
2n6764 2n6766 2n6768 2n6770.pdf

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE,QUALIFIED TO MIL-PRF-19500/543100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power TransistorFEATURESLow RDS(on)Ease of ParallelingQualified to MIL-PRF-19500/543DESCRIPTION
2n6771 2n6772 2n6773.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 High Switching Speed Low Saturation Voltage APPLICATIONSDesigned for use in off-line power supplies and is also well suited for use in a wide
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA843 | 2SD1047-247 | MMBT4122 | 2SB464 | DTD543ZE | 2SA1051A | 2N1963
Keywords - 2N677A transistor datasheet
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History: 2SA843 | 2SD1047-247 | MMBT4122 | 2SB464 | DTD543ZE | 2SA1051A | 2N1963



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