All Transistors. NJVMJD112T4G Datasheet

 

NJVMJD112T4G Datasheet and Replacement


   Type Designator: NJVMJD112T4G
   SMD Transistor Code: J112
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 25 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO252
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NJVMJD112T4G Datasheet (PDF)

 5.1. Size:153K  onsemi
 njvmjd112 njvmjd117.pdf pdf_icon

NJVMJD112T4G

MJD112 (NPN),MJD117 (PNP)Complementary DarlingtonPower TransistorsDPAK For Surface Mount Applicationshttp://onsemi.comDesigned for general purpose power and switching such as output ordriver stages in applications such as switching regulators, converters,SILICONand power amplifiers.POWER TRANSISTORSFeatures2 AMPERES Lead Formed for Surface Mount Applications in Plas

 7.1. Size:148K  onsemi
 njvmjd148.pdf pdf_icon

NJVMJD112T4G

MJD148, NJVMJD148T4GNPN Silicon PowerTransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.FeaturesPOWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @

 7.2. Size:142K  onsemi
 njvmjd122 njvmjd127.pdf pdf_icon

NJVMJD112T4G

MJD122, NJVMJD122(NPN), MJD127,NJVMJD127 (PNP)Complementary DarlingtonPower Transistorhttp://onsemi.comDPAK For Surface Mount ApplicationsSILICONDesigned for general purpose amplifier and low speed switchingPOWER TRANSISTORapplications.8 AMPERES100 VOLTS, 20 WATTSFeatures Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

 7.3. Size:175K  onsemi
 njvmjd128.pdf pdf_icon

NJVMJD112T4G

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | D44VM6 | DTA123EET1G | ESM2060 | MP602 | DTC317 | OC822

Keywords - NJVMJD112T4G transistor datasheet

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