NJVMJD112T4G Specs and Replacement
Type Designator: NJVMJD112T4G
SMD Transistor Code: J112
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 25 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO252
NJVMJD112T4G Substitution
- BJT ⓘ Cross-Reference Search
NJVMJD112T4G datasheet
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas... See More ⇒
MJD148, NJVMJD148T4G NPN Silicon Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. Features POWER TRANSISTOR High Gain - 50 Min @ IC = 2.0 A 4.0 AMPERES Low Saturation Voltage - 0.5 V @ IC = 2.0 A 45 VOLTS, 20 WATTS High Current Gain - Bandwidth Product - fT = 3.0 MHz Min @... See More ⇒
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements... See More ⇒
MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo... See More ⇒
Detailed specifications: NSS20501UW3T2G, NSS20501UW3TBG, NSS20601CF8T1G, NSS40200LT1G, NSS40201LT1G, NSS40300DDR2G, NSS40300MDR2G, NJVMJD112G, TIP42C, NJVMJD117T4G, NJVMJD122T4G, NJVMJD127T4G, NJVMJD128T4G, NJVMJD148T4G, NJVMJD210T4G, NJVMJD243T4G, NJVMJD253T4G
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History: 2SC4081U3HZG
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