NJVMJD31CT4G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

NJVMJD31CT4G Specs and Replacement

Type Designator: NJVMJD31CT4G

SMD Transistor Code: J31C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO252

NJVMJD31CT4G Substitution

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NJVMJD31CT4G datasheet

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NJVMJD3xxT4G-VF01 Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves POWER TRANSISTORS Straight Lead Version in Plastic Sleeves ( 1 Suffix) 3 AMPERES Lead Formed Version in 16 mm ... See More ⇒

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MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S... See More ⇒