All Transistors. NJVMJD31T4G Datasheet

 

NJVMJD31T4G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NJVMJD31T4G
   SMD Transistor Code: J31
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO252

 NJVMJD31T4G Transistor Equivalent Substitute - Cross-Reference Search

   

NJVMJD31T4G Datasheet (PDF)

 ..1. Size:135K  onsemi
mjd31 njvmjd31t4g mjd31c njvmjd31ct4g mjd32 njvmjd32t4g mjd32c njvmjd32cg njvmjd32ct4g.pdf

NJVMJD31T4G
NJVMJD31T4G

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

 6.1. Size:140K  onsemi
njvmjd31 njvmjd32.pdf

NJVMJD31T4G
NJVMJD31T4G

MJD31, NJVMJD31T4G,MJD31C, NJVMJD31CT4G(NPN), MJD32,NJVMJD32T4G, MJD32C,NJVMJD32CG,NJVMJD32CT4G (PNP)http://onsemi.comComplementary PowerSILICONPOWER TRANSISTORSTransistors3 AMPERESDPAK For Surface Mount Applications40 AND 100 VOLTS15 WATTSDesigned for general purpose amplifier and low speed switchingapplications.COMPLEMENTARYFeaturesCOLLECTOR COLLECTOR

 6.2. Size:132K  onsemi
njvmjd31ct4g-vf01 njvmjd32ct4g-vf01.pdf

NJVMJD31T4G
NJVMJD31T4G

NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm

 7.1. Size:172K  onsemi
njvmjd340 njvmjd350.pdf

NJVMJD31T4G
NJVMJD31T4G

MJD340,NJVMJD340T4G (NPN),MJD350,NJVMJD350T4G (PNP)High Voltage Powerhttp://onsemi.comTransistorsDPAK For Surface Mount ApplicationsSILICONDesigned for line operated audio output amplifier, switchmodePOWER TRANSISTORSpower supply drivers and other switching applications.0.5 AMPEREFeatures300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S

 7.2. Size:128K  onsemi
njvmjd2955 njvmjd3055.pdf

NJVMJD31T4G
NJVMJD31T4G

MJD2955 (PNP),MJD3055 (NPN)Complementary PowerTransistorsDPAK for Surface Mount Applicationshttp://onsemi.comDesigned for general purpose amplifier and low speed switchingapplications.SILICONFeatures POWER TRANSISTORS10 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix)60 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves (

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: HI882 | HS649A

 

 
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