NJVMJD350T4G Specs and Replacement

Type Designator: NJVMJD350T4G

SMD Transistor Code: J350

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO252

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NJVMJD350T4G datasheet

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NJVMJD350T4G

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S... See More ⇒

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NJVMJD350T4G

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 7.2. Size:140K  onsemi

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NJVMJD350T4G

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 7.3. Size:128K  onsemi

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Detailed specifications: NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, NJVMJD31T4G, NJVMJD32CG, NJVMJD32CT4G, NJVMJD32T4G, NJVMJD340T4G, B772, NJVMJD41CT4G, NJVMJD42CRLG, NJVMJD42CT4G, NJVMJD44E3T4G, NJVMJD44H11G, NJVMJD44H11RLG, NJVMJD44H11T4G, NJVMJD45H11G

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