NJVMJD350T4G Datasheet, Equivalent, Cross Reference Search
Type Designator: NJVMJD350T4G
SMD Transistor Code: J350
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO252
NJVMJD350T4G Transistor Equivalent Substitute - Cross-Reference Search
NJVMJD350T4G Datasheet (PDF)
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NJVMJD3xxT4G-VF01Complementary PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingwww.onsemi.comapplications.FeaturesSILICON Lead Formed for Surface Mount Applications in Plastic SleevesPOWER TRANSISTORS Straight Lead Version in Plastic Sleeves (1 Suffix)3 AMPERES Lead Formed Version in 16 mm
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
