NST65011MW6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NST65011MW6T1G
SMD Transistor Code: 2G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 65 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT363
NST65011MW6T1G Transistor Equivalent Substitute - Cross-Reference Search
NST65011MW6T1G Datasheet (PDF)
nst65011mw6.pdf
NST65011MW6Dual Matched GeneralPurpose TransistorNPN Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense and Balanced Amplifiers; M
nst65010m.pdf
NST65010MW6Dual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,6Sense and Balanced Amplifiers
nst65010mw6.pdf
NST65010MW6Dual Matched GeneralPurpose TransistorPNP Matched PairThese transistors are housed in an ultra-small SOT-363 packagewww.onsemi.comideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,6Sense and Balanced Amplifiers
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
