NSBA115EDXV6T1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSBA115EDXV6T1G
SMD Transistor Code: 0N
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 100 kOhm
Built in Bias Resistor R2 = 100 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.36
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT563
NSBA115EDXV6T1G Transistor Equivalent Substitute - Cross-Reference Search
NSBA115EDXV6T1G Datasheet (PDF)
nsba115edxv6.pdf
MUN5136DW1,NSBA115EDXV6Dual PNP Bias ResistorTransistorsR1 = 100 kW, R2 = 100 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias
nsba115tf3.pdf
MUN2141, MMUN2141L,MUN5141, DTA115TE,DTA115TM3, NSBA115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsba115tdp6.pdf
NSBA115TDP6Dual PNP Bias ResistorTransistorsR1 = 100 kW, R2 = 8 kWPNP Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic biasnetwork consis
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
