NSBA115TF3T5G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSBA115TF3T5G
SMD Transistor Code: Q
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 100 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT1123-3
NSBA115TF3T5G Transistor Equivalent Substitute - Cross-Reference Search
NSBA115TF3T5G Datasheet (PDF)
nsba115tf3.pdf
MUN2141, MMUN2141L,MUN5141, DTA115TE,DTA115TM3, NSBA115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsba115tdp6.pdf
NSBA115TDP6Dual PNP Bias ResistorTransistorsR1 = 100 kW, R2 = 8 kWPNP Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic biasnetwork consis
nsba115edxv6.pdf
MUN5136DW1,NSBA115EDXV6Dual PNP Bias ResistorTransistorsR1 = 100 kW, R2 = 100 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
