All Transistors. NSBA123EDXV6 Datasheet

 

NSBA123EDXV6 Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSBA123EDXV6
   SMD Transistor Code: 0H
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: SOT563

 NSBA123EDXV6 Transistor Equivalent Substitute - Cross-Reference Search

   

NSBA123EDXV6 Datasheet (PDF)

 ..1. Size:112K  onsemi
nsba123edxv6.pdf

NSBA123EDXV6
NSBA123EDXV6

MUN5131DW1,NSBA123EDXV6Dual PNP Bias ResistorTransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias

 6.1. Size:109K  onsemi
nsba123ef3.pdf

NSBA123EDXV6
NSBA123EDXV6

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 7.1. Size:94K  onsemi
nsba123jdp6.pdf

NSBA123EDXV6
NSBA123EDXV6

MUN5135DW1,NSBA123JDXV6,NSBA123JDP6Dual PNP Bias ResistorTransistorsR1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monol

 7.2. Size:117K  onsemi
nsba123jf3.pdf

NSBA123EDXV6
NSBA123EDXV6

MUN2135, MMUN2135L,MUN5135, DTA123JE,DTA123JM3, NSBA123JF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) co

 7.3. Size:94K  onsemi
nsba123jdxv6.pdf

NSBA123EDXV6
NSBA123EDXV6

MUN5135DW1,NSBA123JDXV6,NSBA123JDP6Dual PNP Bias ResistorTransistorsR1 = 2.2 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkThis series of digital transistors is designed to replace a single(3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monol

 7.4. Size:118K  onsemi
nsba123tdp6.pdf

NSBA123EDXV6
NSBA123EDXV6

NSBA123TDP6Dual PNP Bias ResistorTransistorsR1 = 2.2 kW, R2 = 8 kWPNP Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic biasnetwork consis

 7.5. Size:150K  onsemi
nsba123tf3.pdf

NSBA123EDXV6
NSBA123EDXV6

MUN2138, MMUN2138L,MUN5138, DTA123TE,DTA123TM3, NSBA123TF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 8 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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