NSBA123JDP6 Specs and Replacement
Type Designator: NSBA123JDP6
SMD Transistor Code: P
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.27 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT963
NSBA123JDP6 Substitution
- BJT ⓘ Cross-Reference Search
NSBA123JDP6 datasheet
MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol... See More ⇒
MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol... See More ⇒
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co... See More ⇒
MUN5131DW1, NSBA123EDXV6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias... See More ⇒
Detailed specifications: NSBA115TDP6, NSBA115TDP6T5G, NSBA115TF3, NSBA115TF3T5G, NSBA123EDXV6, NSBA123EDXV6T1G, NSBA123EF3, NSBA123EF3T5G, TIP41C, NSBA123JDP6T5G, NSBA123JDXV6, NSBA123JDXV6T5G, NSBA123JF3, NSBA123JF3T5G, NSBA123TDP6, NSBA123TDP6T5G, NSBA123TF3
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History: KRC245M | BF969
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