2N696S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2N696S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO39
2N696S Transistor Equivalent Substitute - Cross-Reference Search
2N696S Datasheet (PDF)
2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf
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2n696 2n697.pdf
TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W APT @ T = 250C (2) 2.0 W C0Operating & Storage Juncti
Datasheet: 2N6834 , 2N6835 , 2N6836 , 2N6837 , 2N694 , 2N695 , 2N696 , 2N696A , S9014 , 2N697 , 2N697A , 2N697S , 2N698 , 2N6987 , 2N6988 , 2N699 , 2N699A .
