NSVMMUN2131LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVMMUN2131LT1G
SMD Transistor Code: A6H
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 2.2 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.25
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: SOT23
NSVMMUN2131LT1G Transistor Equivalent Substitute - Cross-Reference Search
NSVMMUN2131LT1G Datasheet (PDF)
nsvmmun2131lt1g.pdf
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nsvmmun2132lt1g.pdf
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nsvmmun2133lt1g.pdf
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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .