All Transistors. NSS1C200MZ4T1G Datasheet

 

NSS1C200MZ4T1G Datasheet and Replacement


   Type Designator: NSS1C200MZ4T1G
   SMD Transistor Code: 1C200
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 140 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 120 MHz
   Collector Capacitance (Cc): 22 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT223
 

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NSS1C200MZ4T1G Datasheet (PDF)

 ..1. Size:109K  onsemi
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NSS1C200MZ4T1G

NSS1C200MZ4,NSV1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy cont

 3.1. Size:198K  onsemi
 nss1c200mz4 nsv1c200mz4.pdf pdf_icon

NSS1C200MZ4T1G

PNP Transistor, Low VCE(sat)100 V, 2.0 ANSS1C200MZ4,NSV1C200MZ4ON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowwww.onsemi.comsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applications-100 VOLTS, 2.0 AMPSwhere affordable ef

 3.2. Size:100K  onsemi
 nss1c200mz4.pdf pdf_icon

NSS1C200MZ4T1G

NSS1C200MZ4100 V, 2.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa

 6.1. Size:124K  onsemi
 nss1c200lt1.pdf pdf_icon

NSS1C200MZ4T1G

NSS1C200LT1G100 V, 3.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesehttp://onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is import

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Datasheet: NSVMMUN2230LT1G , NSVMMUN2232LT1G , NSVMMUN2232LT3G , NSVMMUN2233LT3G , NSVMMUN2235LT1G , NSS12500UW3T2G , NSS12501UW3T2G , NSS12601CF8T1G , TIP2955 , NSS1C200MZ4T3G , NSS1C201L , NSS1C201MZ4 , NSS1C201MZ4T3G , NSS1C300E , NSS1C300ET4G , NSS1C301E , NSS1C301ET4G .

History: CTN393

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