NSVMMBT6517LT1G Datasheet and Replacement
Type Designator: NSVMMBT6517LT1G
SMD Transistor Code: 1Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT23
NSVMMBT6517LT1G Substitution
NSVMMBT6517LT1G Datasheet (PDF)
nsvmmbt6517lt1g.pdf
MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC
nsvmmbt6520lt1g.pdf
MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC
mmbt6520l nsvmmbt6520l.pdf
MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitColl
Datasheet: NSVMMBT2907AWT1G , NSVMMBT5087LT1G , NSVMMBT5087LT3G , NSVMMBT5088LT3G , NSVMMBT5401LT3G , NSVMMBT5401WT1G , NSVMMBT589LT1G , NSVMMBT6429LT1G , TIP36C , NSVMMBT6520LT1G , NSVMMBTA05LT1G , NSVMMBTH10LT1G , NSVDTA113EM3T5G , NSVDTA114EET1G , NSVDTA114EM3T5G , NSVDTA115EET1G , NSVDTA123EM3T5G .
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