NSVMMBT6517LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVMMBT6517LT1G
SMD Transistor Code: 1Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT23
NSVMMBT6517LT1G Transistor Equivalent Substitute - Cross-Reference Search
NSVMMBT6517LT1G Datasheet (PDF)
nsvmmbt6517lt1g.pdf
MMBT6517L,NSVMMBT6517LHigh Voltage TransistorNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERC
nsvmmbt6520lt1g.pdf
MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC
mmbt6520l nsvmmbt6520l.pdf
MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitColl
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
