NSVDTA144WET1G Datasheet, Equivalent, Cross Reference Search
Type Designator: NSVDTA144WET1G
SMD Transistor Code: 6P
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT416
NSVDTA144WET1G Transistor Equivalent Substitute - Cross-Reference Search
NSVDTA144WET1G Datasheet (PDF)
nsvdta144wet1g.pdf
MUN2137, MMUN2137L,MUN5137, DTA144WE,DTA144WM3, NSBA144WF3Digital Transistors (BRT)R1 = 47 kW, R2 = 22 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
nsvdta144eet1g.pdf
MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT
nsvdta143zet1g.pdf
MUN2133, MMUN2133L,MUN5133, DTA143ZE,DTA143ZM3, NSBA143ZF3Digital Transistors (BRT)R1 = 4.7 kW, R2 = 47 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor
nsvdta113em3t5g.pdf
MUN2130, MMUN2130L,MUN5130, DTA113EE,DTA113EM3, NSBA113EF3Digital Transistors (BRT)R1 = 1 kW, R2 = 1 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT)
nsvdta114eet1g.pdf
MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsvdta114em3t5g.pdf
MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsvdta115eet1g.pdf
MUN2136, MMUN2136L,MUN5136, DTA115EE,DTA115EM3Digital Transistors (BRT)R1 = 100 kW, R2 = 100 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT) contains
nsvdta123em3t5g.pdf
MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
