NSBC113EDXV6 Specs and Replacement
Type Designator: NSBC113EDXV6
SMD Transistor Code: 7G
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 1 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3
Package: SOT563
NSBC113EDXV6 Substitution
- BJT ⓘ Cross-Reference Search
NSBC113EDXV6 datasheet
MUN5230DW1, NSBC113EDXV6 Dual NPN Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor with a monolithic b... See More ⇒
MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli... See More ⇒
MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 kW, R2 = 1 kW www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT)... See More ⇒
MUN5330DW1, NSBC113EPDXV6 Complementary Bias Resistor Transistors R1 = 1 kW, R2 = 1 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monoli... See More ⇒
Detailed specifications: NSVDTC113EM3T5G, NSVDTC114YM3T5G, NSVDTC123EM3T5G, NSVDTC143ZET1G, NSVDTC143ZM3T5G, NSVDTC144EM3T5G, NSVDTC144TM3T5G, NSVDTC144WET1G, BC548, NSBC113EDXV6T1G, NSBC113EF3, NSBC113EF3T5G, NSBC113EPDXV6, NSBC113EPDXV6T1G, NSBC114EDP6, NSBC114EDP6T5G, NSBC114EDXV6
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History: 2SC762 | 2SC757 | 2SC759
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