NSBC114EF3 Datasheet, Equivalent, Cross Reference Search
Type Designator: NSBC114EF3
SMD Transistor Code: A
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: SOT1123-3
NSBC114EF3 Transistor Equivalent Substitute - Cross-Reference Search
NSBC114EF3 Datasheet (PDF)
nsbc114ef3.pdf
MUN2211, MMUN2211L,MUN5211, DTC114EE,DTC114EM3, NSBC114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsbc114ef3-d.pdf
NSBC114EF3T5G SeriesPreferred DevicesDigital Transistors (BRT)NPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The digital transistorcontains a single transistor with a monolithic bias network consistingof two resistors;
nsbc114edp6.pdf
MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
nsbc114epdp6.pdf
MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single
nsbc114epdxv6.pdf
MUN5311DW1,NSBC114EPDXV6,NSBC114EPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single
nsbc114edxv6-d.pdf
NSBC114EDXV6T1,NSBC114EDXV6T5Preferred DevicesDual Bias ResistorTransistorsNPN Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThe BRT (Bias Resistor Transistor) contains a single transistor with(3) (2) (1)a monolithic bias network consisting of two resistors; a series baseR1 R2resistor and a base-emitter resistor. These digital tra
nsbc114edxv6.pdf
MUN5211DW1,NSBC114EDXV6,NSBC114EDP6Dual NPN Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
