NSBC114EPDXV6T1G Specs and Replacement
Type Designator: NSBC114EPDXV6T1G
SMD Transistor Code: 11
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 35
Package: SOT563
NSBC114EPDXV6T1G Substitution
- BJT ⓘ Cross-Reference Search
NSBC114EPDXV6T1G datasheet
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single... See More ⇒
MUN5311DW1, NSBC114EPDXV6, NSBC114EPDP6 Complementary Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single... See More ⇒
MUN5211DW1, NSBC114EDXV6, NSBC114EDP6 Dual NPN Bias Resistor Transistors http //onsemi.com R1 = 10 kW, R2 = 10 kW NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single transistor wit... See More ⇒
NSBC114EDXV6T1, NSBC114EDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors http //onsemi.com with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with (3) (2) (1) a monolithic bias network consisting of two resistors; a series base R1 R2 resistor and a base-emitter resistor. These digital tra... See More ⇒
Detailed specifications: NSBC114EDXV6, NSBC114EDXV6T1G, NSBC114EDXV6T5G, NSBC114EF3, NSBC114EF3T5G, NSBC114EPDP6, NSBC114EPDP6T5G, NSBC114EPDXV6, A1941, NSBC114EPDXV6T5G, NSBC114TDP6, NSBC114TDP6T5G, NSBC114TDXV6, NSBC114TDXV6T1G, NSBC114TDXV6T5G, NSBC114TF3, NSBC114TF3T5G
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History: BTC3838N3
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