NSBC115TDP6T5G Datasheet and Replacement
Type Designator: NSBC115TDP6T5G
SMD Transistor Code: AF
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 100 kOhm
Maximum Collector Power Dissipation (Pc): 0.27 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT963
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NSBC115TDP6T5G Datasheet (PDF)
nsbc115tdp6.pdf

NSBC115TDDual NPN Bias ResistorTransistorsR1 = 100 kW, R2 = 8 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkMARKING This series of digital transistors is designed to replace a singleDIAGRAMdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasAFMGSOT-963network cons
nsbc115tf3.pdf

MUN2241, MMUN2241L,MUN5241, DTC115TE,DTC115TM3, NSBC115TF3Digital Transistors (BRT)R1 = 100 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsbc115tpdp6.pdf

NSBC115TPDP6Complementary BiasResistor TransistorsR1 = 100 kW, R2 = 8 kWNPN and PNP Transistors with Monolithichttp://onsemi.comBias Resistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic bias
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: UN6224 | KTC2553 | RN1506 | NA11F | 2SC5183 | 2SA75 | S9012J
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History: UN6224 | KTC2553 | RN1506 | NA11F | 2SC5183 | 2SA75 | S9012J



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