All Transistors. NSBC123EPDXV6T1G Datasheet

 

NSBC123EPDXV6T1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: NSBC123EPDXV6T1G
   SMD Transistor Code: 31
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: SOT563

 NSBC123EPDXV6T1G Transistor Equivalent Substitute - Cross-Reference Search

   

NSBC123EPDXV6T1G Datasheet (PDF)

 1.1. Size:80K  onsemi
nsbc123epdxv6.pdf

NSBC123EPDXV6T1G
NSBC123EPDXV6T1G

MUN5331DW1,NSBC123EPDXV6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mo

 6.1. Size:109K  onsemi
nsbc123ef3.pdf

NSBC123EPDXV6T1G
NSBC123EPDXV6T1G

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

 6.2. Size:389K  onsemi
mun2231 mmun2231l mun5231 dtc123ee dtc123em3 nsbc123ef3.pdf

NSBC123EPDXV6T1G
NSBC123EPDXV6T1G

MUN2231, MMUN2231L,MUN5231, DTC123EE,DTC123EM3, NSBC123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3This series of digital transistors is designed to replace a singleCOLLECTOR(OUTPUT)device and its external resistor bias network. The Bias ResistorPIN 1R1Transistor (BRT) c

 6.3. Size:131K  onsemi
nsbc123edxv6.pdf

NSBC123EPDXV6T1G
NSBC123EPDXV6T1G

MUN5231DW1,NSBC123EDXV6Dual NPN Bias ResistorTransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor with a monolith

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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