NSBC123TF3T5G Datasheet and Replacement
Type Designator: NSBC123TF3T5G
SMD Transistor Code: T
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT1123-3
NSBC123TF3T5G Substitution
NSBC123TF3T5G Datasheet (PDF)
nsbc123tf3.pdf

MUN2238, MMUN2238L,MUN5238, DTC123TE,DTC123TM3, NSBC123TF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
nsbc123tpdp6.pdf

NSBC123TPDP6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 8 kWNPN and PNP Transistors with Monolithichttp://onsemi.comBias Resistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic bias
nsbc123tdp6.pdf

NSBC123TDP6Dual NPN Bias ResistorTransistorsR1 = 2.2 kW, R2 = 8 kWNPN Transistors with Monolithic Biashttp://onsemi.comResistor NetworkPIN CONNECTIONSThis series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias Resistor(3) (2) (1)Transistor (BRT) contains a single transistor with a monolithic biasnetwork consis
Datasheet: NSBC123JPDP6 , NSBC123JPDP6T5G , NSBC123JPDXV6 , NSBC123JPDXV6T1G , NSBC123JPDXV6T5G , NSBC123TDP6 , NSBC123TDP6T5G , NSBC123TF3 , 2SD1555 , NSBC123TPDP6 , NSBC123TPDP6T5G , NSVMUN5131T1G , NSVMUN5135DW1T1G , NSVMUN5137DW1T1G , NSVMUN5211DW1T3G , NSVMUN5212DW1T1G , NSVMUN5213DW1T3G .
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History: 2SB639 | BD952



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