All Transistors. NSVMUN5316DW1T1G Datasheet

 

NSVMUN5316DW1T1G Datasheet and Replacement


   Type Designator: NSVMUN5316DW1T1G
   SMD Transistor Code: 16
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 160
   Noise Figure, dB: -
   Package: SOT363
 

 NSVMUN5316DW1T1G Substitution

   - BJT ⓘ Cross-Reference Search

   

NSVMUN5316DW1T1G Datasheet (PDF)

 0.1. Size:80K  onsemi
 nsvmun5316dw1t1g.pdf pdf_icon

NSVMUN5316DW1T1G

MUN5316DW1,NSBC143TPDXV6Complementary BiasResistor TransistorsR1 = 4.7 kW, R2 = 8 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mon

 5.1. Size:103K  onsemi
 nsvmun5314dw1t3g.pdf pdf_icon

NSVMUN5316DW1T1G

MUN5314DW1,NSBC114YPDXV6,NSBC114YPDP6Complementary BiasResistor Transistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSNPN and PNP Transistors with MonolithicBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single

 5.2. Size:110K  onsemi
 nsvmun5312dw1t3g.pdf pdf_icon

NSVMUN5316DW1T1G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

 5.3. Size:110K  onsemi
 nsvmun5312dw1t2g.pdf pdf_icon

NSVMUN5316DW1T1G

MUN5312DW1,NSBC124EPDXV6,NSBC124EPDP6Complementary BiasResistor Transistorswww.onsemi.comR1 = 22 kW, R2 = 22 kWNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transisto

SHOW MORE

Datasheet: NSVMUN5215DW1T1G , NSVMUN5233DW1T3G , NSVMUN5236T1G , NSVMUN5111DW1T3G , NSVMUN5113DW1T3G , NSVMUN5312DW1T2G , NSVMUN5312DW1T3G , NSVMUN5314DW1T3G , AC125 , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , NSVMUN5333DW1T1G , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G , NSVBCP53-16T3G , NSVBCP56-10T3G .

History: BU941ZF3 | 2SC2176 | RCS29 | 2SB421 | BUL310PI | BUW12AW | RN49A2

Keywords - NSVMUN5316DW1T1G transistor datasheet

 NSVMUN5316DW1T1G cross reference
 NSVMUN5316DW1T1G equivalent finder
 NSVMUN5316DW1T1G lookup
 NSVMUN5316DW1T1G substitution
 NSVMUN5316DW1T1G replacement

 

 
Back to Top

 


 
.