NSVMUN5333DW1T1G Specs and Replacement
Type Designator: NSVMUN5333DW1T1G
SMD Transistor Code: 33
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT363
NSVMUN5333DW1T1G Substitution
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NSVMUN5333DW1T1G datasheet
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and... See More ⇒
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and... See More ⇒
MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Dual Bias Resistor Transistors http //onsemi.com http //onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network SOT-363 CASE 419B The Bias Resistor Transistor (BRT) contains a single transistor with STYLE 1 a monolithic bias network consisting of two resistors; a series base resistor and... See More ⇒
MUN5331DW1, NSBC123EPDXV6 Complementary Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http //onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mo... See More ⇒
Detailed specifications: NSVMUN5111DW1T3G, NSVMUN5113DW1T3G, NSVMUN5312DW1T2G, NSVMUN5312DW1T3G, NSVMUN5314DW1T3G, NSVMUN5316DW1T1G, NSVMUN5331DW1T1G, NSVMUN5332DW1T1G, 2N5401, NSVMUN5333DW1T3G, NSVMUN5334DW1T1G, NSVPZTA92T1G, NSVBCP53-16T3G, NSVBCP56-10T3G, NSVBCP69T1G, NSVBCW32LT1G, NSVBCW68GLT1G
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