NSVMUN5333DW1T1G Datasheet and Replacement
Type Designator: NSVMUN5333DW1T1G
SMD Transistor Code: 33
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT363
NSVMUN5333DW1T1G Substitution
NSVMUN5333DW1T1G Datasheet (PDF)
nsvmun5333dw1t1g.pdf

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and
nsvmun5332dw1t1g.pdf

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and
nsvmun5334dw1t1g.pdf

MUN5311DW1T1G,SMUN5311DW1T1G,NSVMUN5311DW1T1G SeriesDual Bias ResistorTransistorshttp://onsemi.comhttp://onsemi.comNPN and PNP Silicon Surface MountTransistors with Monolithic BiasResistor NetworkSOT-363CASE 419BThe Bias Resistor Transistor (BRT) contains a single transistor withSTYLE 1a monolithic bias network consisting of two resistors; a series baseresistor and
nsvmun5331dw1t1g.pdf

MUN5331DW1,NSBC123EPDXV6Complementary BiasResistor TransistorsR1 = 2.2 kW, R2 = 2.2 kWhttp://onsemi.comNPN and PNP Transistors with MonolithicPIN CONNECTIONSBias Resistor NetworkThis series of digital transistors is designed to replace a single (3) (2) (1)device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a mo
Datasheet: NSVMUN5111DW1T3G , NSVMUN5113DW1T3G , NSVMUN5312DW1T2G , NSVMUN5312DW1T3G , NSVMUN5314DW1T3G , NSVMUN5316DW1T1G , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , TIP41 , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G , NSVBCP53-16T3G , NSVBCP56-10T3G , NSVBCP69T1G , NSVBCW32LT1G , NSVBCW68GLT1G .
History: 2SA1753 | BDS29A | 2SC3956 | SK3194 | 2SC323 | 2SC1222E | KT639G
Keywords - NSVMUN5333DW1T1G transistor datasheet
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History: 2SA1753 | BDS29A | 2SC3956 | SK3194 | 2SC323 | 2SC1222E | KT639G



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