NSVMUN2112T1G Specs and Replacement
Type Designator: NSVMUN2112T1G
SMD Transistor Code: A6B
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT23
NSVMUN2112T1G Substitution
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NSVMUN2112T1G datasheet
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Detailed specifications: NSVMUN5334DW1T1G, NSVPZTA92T1G, NSVBCP53-16T3G, NSVBCP56-10T3G, NSVBCP69T1G, NSVBCW32LT1G, NSVBCW68GLT1G, NSVMSD42WT1G, 13007, NSVMUN2212T1G, NSVMUN2233T1G, NSVMUN2237T1G, NSV40501UW3T2G, NSV60100DMTWTBG, NSV60101DMTWTBG, NSV60200LT1G, NSV60201LT1G
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