All Transistors. NSV60601MZ4T1G Datasheet

 

NSV60601MZ4T1G Datasheet and Replacement


   Type Designator: NSV60601MZ4T1G
   SMD Transistor Code: 60601
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 37 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT223
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NSV60601MZ4T1G Datasheet (PDF)

 3.1. Size:110K  onsemi
 nsv60601mz4.pdf pdf_icon

NSV60601MZ4T1G

NSS60601MZ4,NSV60601MZ4T1G,NSV60601MZ4T3G60 V, 6.0 A, Low VCE(sat)NPN Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching applications

 7.1. Size:126K  onsemi
 nsv60600mz4.pdf pdf_icon

NSV60601MZ4T1G

NSS60600MZ4,NSV60600MZ4T1G,NSV60600MZ4T3G60 V, 6.0 A, Low VCE(sat)PNP Transistorhttp://onsemi.comON Semiconductors e2PowerEdge family of low VCE(sat)transistors are surface mount devices featuring ultra low saturation-60 VOLTS, 6.0 AMPSvoltage (VCE(sat)) and high current gain capability. These are designed2.0 WATTSfor use in low voltage, high speed switching application

 9.1. Size:116K  onsemi
 nsv60100dmtwtbg.pdf pdf_icon

NSV60601MZ4T1G

NSS60100DMT60 V, 1 A, Low VCE(sat) PNPTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

 9.2. Size:109K  onsemi
 nsv60101dmtwtbg.pdf pdf_icon

NSV60601MZ4T1G

NSS60101DMT60 V, 1 A, Low VCE(sat) NPNTransistorsON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Thesewww.onsemi.comare designed for use in low voltage, high speed switching applicationswhere affordable efficient energy control is important.

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD129 | 3N112 | 2H1259 | NSVB124XPDXV6T1G | MMS8550 | KTC3881 | UN9110S

Keywords - NSV60601MZ4T1G transistor datasheet

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