NSVBC818-40LT1G Datasheet and Replacement
Type Designator: NSVBC818-40LT1G
SMD Transistor Code: 6G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT23
NSVBC818-40LT1G Substitution
NSVBC818-40LT1G Datasheet (PDF)
nsvbc818-40lt1g.pdf
BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Uni
bc818-40l nsvbc818-40l.pdf
BC818-40L, NSVBC818-40LGeneral PurposeTransistorsNPN Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit
nsvbc817-16lt1g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorshttp://onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Complian
bc817-16lt1g nsvbc817-16lt1g bc817-25lt1g sbc817-25lt1g bc817-40lt1g sbc817-40lt1g.pdf
BC817-16L, SBC817-16L,BC817-25L, SBC817-25L,BC817-40L, SBC817-40LGeneral PurposeTransistorswww.onsemi.comNPN SiliconCOLLECTORFeatures 3 S and NSV Prefixes for Automotive and Other ApplicationsRequiring Unique Site and Control Change Requirements; 1BASEAEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2Compliant
Datasheet: NSV60200LT1G , NSV60201LT1G , NSV60600MZ4T1G , NSV60600MZ4T3G , NSV60601MZ4T1G , NSV60601MZ4T3G , NSV9435T1G , NSVBC817-16LT1G , 2SC4793 , NSVBC846BM3T5G , NSVBC847BDW1T2G , NSVBC847BLT3G , NSVBC847BTT1G , NSVBC848BWT1G , NSVBC848CDW1T1G , NSVBC848CLT1G , NSVBC850BLT1G .
History: ETP2008
Keywords - NSVBC818-40LT1G transistor datasheet
NSVBC818-40LT1G cross reference
NSVBC818-40LT1G equivalent finder
NSVBC818-40LT1G lookup
NSVBC818-40LT1G substitution
NSVBC818-40LT1G replacement
History: ETP2008
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
c945 datasheet | irfp260 | ksc2383 | 2n3773 | b772 transistor | 50n06 | mje350 | 2n3866