NSVBC847BLT3G Datasheet and Replacement
Type Designator: NSVBC847BLT3G
SMD Transistor Code: 1F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.23 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: SOT23
NSVBC847BLT3G Substitution
NSVBC847BLT3G Datasheet (PDF)
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BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-
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BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureswww.onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: > 4000 VESD Rating - Machine Model: > 400 VCOLLECTOR3 S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q1011Qualified and PPAP CapableBASE These Device
nsvbc847blt3g.pdf

BC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating - Human Body Model: >4000 VESD Rating - Machine Model: >400 V S and NSV Prefix for Automotive and Other Applications Requiring COLLECTOR3Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable1 These Devices are Pb-
nsvbc847btt1g.pdf

BC847ATT1, BC847BTT1,BC847CTT1General PurposeTransistorsNPN Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SC-75/SOT-416 package whichCOLLECTORis designed for low power surface mount applications. 3Features1 NSV Prefix for Automotive and Other Applications Requiring BASEUnique Site and Control
Datasheet: NSV60600MZ4T3G , NSV60601MZ4T1G , NSV60601MZ4T3G , NSV9435T1G , NSVBC817-16LT1G , NSVBC818-40LT1G , NSVBC846BM3T5G , NSVBC847BDW1T2G , A940 , NSVBC847BTT1G , NSVBC848BWT1G , NSVBC848CDW1T1G , NSVBC848CLT1G , NSVBC850BLT1G , NSVBC850CLT1G , NSVBC857BLT3G , NSVBC857BTT1G .
History: D40P4 | MP2904A | BFT73 | KSC2710Y | BDC05 | LMUN2113LT1G | 2T3169B
Keywords - NSVBC847BLT3G transistor datasheet
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History: D40P4 | MP2904A | BFT73 | KSC2710Y | BDC05 | LMUN2113LT1G | 2T3169B



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