NSS20200LT1G Datasheet and Replacement
Type Designator: NSS20200LT1G
SMD Transistor Code: VC
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.71 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT23
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NSS20200LT1G Datasheet (PDF)
nss20200lt1g.pdf

NSS20200LT1G,NSV20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)http://onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-20 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable
nss20200lt1g nsv20200lt1g.pdf

NSS20200LT1G,NSV20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)www.onsemi.comtransistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. These-20 VOLTSare designed for use in low voltage, high speed switching applications4.0 AMPSwhere affordable ef
nss20200l-d.pdf

NSS20200LT1G20 V, 4.0 A, Low VCE(sat)PNP TransistorON Semiconductors e2PowerEdge family of low VCE(sat)transistors are miniature surface mount devices featuring ultra lowsaturation voltage (VCE(sat)) and high current gain capability. Theseare designed for use in low voltage, high speed switching applicationshttp://onsemi.comwhere affordable efficient energy control is importa
nss20200dmt.pdf

DATA SHEETwww.onsemi.comLow VCE(sat) PNP Transistors 20 Volt, 2 AmpPNP Low VCE(sat) Transistors20 V, 2 ANSS20200DMT MARKINGDIAGRAMonsemis e2PowerEdge family of low VCE(sat) transistors are1 6miniature surface mount devices featuring ultra low saturation voltageWDFN6AT MG2 5(VCE(sat)) and high current gain capability. These are designed for useCASE 506ANG3 41
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: RN2963FE | MP507 | BLX20 | RT1N140M | GD180A | DTC144TET1G | BD612
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History: RN2963FE | MP507 | BLX20 | RT1N140M | GD180A | DTC144TET1G | BD612



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