2N705A Specs and Replacement
Type Designator: 2N705A
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO18
2N705A Substitution
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2N705A datasheet
2N7051 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. Sourced from Process 06. See 2N7052 for Characteristics. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TA=25 C unless otherwise noted Symbol Parameter Ratings ... See More ⇒
Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C C TO-92 B B TO-226 C E SOT-223 B E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO C... See More ⇒
isc N-Channel MOSFET Transistor 2N7054 FEATURES Drain Current I =43A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
Detailed specifications: 2N700, 2N700-18, 2N700A, 2N700A-18, 2N701, 2N702, 2N703, 2N705, 2SD2499, 2N706, 2N706-46, 2N706-51, 2N706A, 2N706A-46, 2N706A-51, 2N706B, 2N706B-46
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History: 2SC371 | 2N694 | 2SC3260 | 2N715 | 2SC3265Y | 2SC3266GR | BD283
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