All Transistors. NSVBA114YDXV6T1G Datasheet

 

NSVBA114YDXV6T1G Datasheet and Replacement


   Type Designator: NSVBA114YDXV6T1G
   SMD Transistor Code: 0D
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.36 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT563
 

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NSVBA114YDXV6T1G Datasheet (PDF)

 0.1. Size:128K  onsemi
 nsvba114ydxv6t1g.pdf pdf_icon

NSVBA114YDXV6T1G

MUN5114DW1,NSBA114YDXV6,NSBA114YDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 47 kWPIN CONNECTIONSPNP Transistors with Monolithic BiasResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singleR1 R2device and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor wit

 6.1. Size:89K  onsemi
 nsvba114edxv6t1g.pdf pdf_icon

NSVBA114YDXV6T1G

MUN5111DW1,NSBA114EDXV6,NSBA114EDP6Dual PNP Bias ResistorTransistorshttp://onsemi.comR1 = 10 kW, R2 = 10 kWPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor Network(3) (2) (1)This series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorR1 R2Transistor (BRT) contains a single transistor wit

Datasheet: NSVB114YPDXV6T1G , NSVB123JPDXV6T1G , NSVB124XPDXV6T1G , NSVB143TPDXV6T1G , NSVB143ZPDXV6T1G , NSVB144EPDXV6T1G , NSVB1706DMW5T1G , NSVBA114EDXV6T1G , BC549 , NSVBC114EDXV6T1G , NSVBC114EPDXV6T1G , NSVBC114YDXV6T1G , NSVBC124EDXV6T1G , NSV2SA2029M3T5G , NSV2SC5658M3T5G , NSV40200LT1G , NSV40200UW6T1G .

History: HA5009 | UN212X

Keywords - NSVBA114YDXV6T1G transistor datasheet

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