SK3114A Datasheet and Replacement
Type Designator: SK3114A
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO92
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SK3114A Datasheet (PDF)
2sk3114b.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk3114.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3114SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3114 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3114 Isolated TO-220designed for high voltage applications such as switching powersupply, AC adapter.FEATURES
2sk3114.pdf

isc N-Channel MOSFET Transistor 2SK3114FEATURESDrain Current : I = 4A@ T =25D CDrain Source Voltage: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.ABSOL
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: NTE2547 | NTE16 | KT603E | ED1602E | CD9011H | RN1909 | KT8143J
Keywords - SK3114A transistor datasheet
SK3114A cross reference
SK3114A equivalent finder
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History: NTE2547 | NTE16 | KT603E | ED1602E | CD9011H | RN1909 | KT8143J



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