SK3450 Specs and Replacement
Type Designator: SK3450
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.4 A
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: TO92M
- BJT ⓘ Cross-Reference Search
SK3450 datasheet
0.1. Size:104K fuji
2sk3450-01.pdf 
FUJI POWER MOSFET 200303 2SK3450-01 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
0.2. Size:288K inchange semiconductor
2sk3450.pdf
isc N-Channel MOSFET Transistor 2SK3450 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
9.2. Size:64K 1
2sk3454.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3454 Isolated TO-220 and designed for high voltage applications such as DC/DC converter. FEATURES Gate vol... See More ⇒
9.3. Size:190K toshiba
2sk3453.pdf
2SK3453 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3453 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.72 (typ.) High forward transfer admittance Yfs = 7.0 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 700 V) Enhancement model Vth = 2.0 4.0 V (VDS = 10 V, ID = 1 mA) Absolut... See More ⇒
9.4. Size:241K renesas
2sk3458-s-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.5. Size:236K renesas
2sk3457.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.6. Size:328K nec
2sk3455b.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.7. Size:70K nec
2sk3456-s-zj.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3456 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3456 is N-channel DMOS FET device that PART NUMBER PACKAGE features a low gate charge and excellent switching 2SK3456 TO-220AB characteristics, designed for high voltage applications such 2SK3456-S TO-262 as switching power supply, AC adapter. 2SK3456-ZJ TO-263 ... See More ⇒
9.8. Size:293K nec
2sk3455.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
9.11. Size:115K fuji
2sk3451-01.pdf
2SK3451-01MR FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle... See More ⇒
9.12. Size:288K inchange semiconductor
2sk345.pdf
isc N-Channel MOSFET Transistor 2SK345 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
9.13. Size:279K inchange semiconductor
2sk3454.pdf
isc N-Channel MOSFET Transistor 2SK3454 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.63 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.14. Size:286K inchange semiconductor
2sk3453.pdf
isc N-Channel MOSFET Transistor 2SK3453 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 1 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.15. Size:278K inchange semiconductor
2sk3457.pdf
isc N-Channel MOSFET Transistor 2SK3457 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 2.2 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.16. Size:280K inchange semiconductor
2sk3451-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3451-01MR FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s... See More ⇒
Detailed specifications: SK3245, SK3246A, SK3250, SK3275, SK3293, SK3433, SK3434, SK3449, 13005, SK3452, SK3456, SK3479, SK3715, SK3841, SK3842, SK3849, SK3854
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