2N709-51 Specs and Replacement
Type Designator: 2N709-51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 800 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO51
2N709-51 Substitution
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2N709-51 datasheet
2N7091 MECHANICAL DATA Dimensions in mm(inches) P CHANNEL ENHANCEMENT MODE 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) TRANSISTOR 1.14 (0.045) 3.56 (0.140) Dia. 3.81 (0.150) V(BR)DSS -100V 1 2 3 ID(A) -14A RDS(on) 0.20 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) 3.05 (0.120) BSC BSC FEATURES TO257AB HERMETIC PACKAGE FOR HIGH RELIABILITY APP... See More ⇒
Detailed specifications: 2N707, 2N707A, 2N708, 2N708-46, 2N708-51, 2N708A, 2N709, 2N709-46, TIP2955, 2N709A, 2N709A-46, 2N709A-51, 2N71, 2N710, 2N710A, 2N711, 2N711A
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