2N709-51 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N709-51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 15 V
   Maximum Collector-Emitter Voltage |Vce|: 6 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 800 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO51

2N709-51 Transistor Equivalent Substitute - Cross-Reference Search

2N709-51 Datasheet (PDF)

9.1. Size:207K rca
2n709.pdf

9.2. Size:34K semelab
2n7091.pdf

2N7091MECHANICAL DATADimensions in mm(inches)PCHANNELENHANCEMENT MODE4.83 (0.190)5.08 (0.200)10.41 (0.410)10.67 (0.420)0.89 (0.035)TRANSISTOR1.14 (0.045)3.56 (0.140)Dia.3.81 (0.150)V(BR)DSS -100V1 2 3ID(A) -14ARDS(on) 0.200.64 (0.025)Dia.0.89 (0.035)2.54 (0.100) 3.05 (0.120)BSC BSCFEATURES TO257AB HERMETIC PACKAGE FORHIGH RELIABILITY APP

9.3. Size:242K siliconix
2n7092.pdf