SK3841 Specs and Replacement
Type Designator: SK3841
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Electrical Characteristics
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
SK3841 datasheet
9.2. Size:213K 1
2sk3843.pdf 
2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 2.7 m (typ.) High forward transfer admittance Yfs = 120 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 3.0 V (VDS... See More ⇒
9.3. Size:216K toshiba
2sk3842.pdf
2SK3842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3842 Switching Regulator Applications, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) =4.6 m (typ.) High forward transfer admittance Yfs = 93 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement model Vth... See More ⇒
9.4. Size:997K toshiba
2sk3847.pdf
2SK3847 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK3847 Switching Regulator, DC/DC Converter and Motor Drive Unit mm Applications Low drain source ON resistance RDS (ON) = 12 m (typ.) High forward transfer admittance Yfs = 36 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 to 2.5 V (VDS = 1... See More ⇒
9.5. Size:231K toshiba
2sk3845.pdf
2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 4.7 m (typ.) High forward transfer admittance Yfs = 88 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement model Vt... See More ⇒
9.6. Size:228K toshiba
2sk3844.pdf
2SK3844 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS ) 2SK3844 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 4.1 m (typ.) High forward transfer admittance Yfs = 63 S (typ.) Low leakage current IDSS = 100 A (max)(VDS = 60 V) Enhancement mode Vth = 2.0... See More ⇒
9.7. Size:182K toshiba
2sk3846.pdf
2SK3846 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII) 2SK3846 Switching Regulator, DC/DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 12 m (typ.) High forward transfer admittance Yfs = 33 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 40 V) Enhancement mode Vth = 1.5 2.5 V (VDS ... See More ⇒
9.10. Size:357K inchange semiconductor
2sk3847b.pdf
isc N-Channel MOSFET Transistor 2SK3847B FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.11. Size:286K inchange semiconductor
2sk384s.pdf
isc N-Channel MOSFET Transistor 2SK384S FEATURES Drain Current I = 0.3A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.12. Size:354K inchange semiconductor
2sk384l.pdf
isc N-Channel MOSFET Transistor 2SK384L FEATURES Drain Current I = 0.3A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 50 (Max) @V =15V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.13. Size:286K inchange semiconductor
2sk3845.pdf
isc N-Channel MOSFET Transistor 2SK3845 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.14. Size:283K inchange semiconductor
2sk3847k.pdf
isc N-Channel MOSFET Transistor 2SK3847K FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.15. Size:279K inchange semiconductor
2sk3844.pdf
isc N-Channel MOSFET Transistor 2SK3844 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.16. Size:287K inchange semiconductor
2sk3846.pdf
isc N-Channel MOSFET Transistor 2SK3846 FEATURES Drain Current I = 78A@ T =25 D C Drain Source Voltage V = 40V(Min) DSS Static Drain-Source On-Resistance R = 16m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d... See More ⇒
Detailed specifications: SK3433, SK3434, SK3449, SK3450, SK3452, SK3456, SK3479, SK3715, NJW0281G, SK3842, SK3849, SK3854, SK3866A, SK3867A, SK3899, SK3911, SK3912
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