SK3912 Specs and Replacement
Type Designator: SK3912
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.5 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: EPAK
- BJT ⓘ Cross-Reference Search
SK3912 datasheet
9.1. Size:167K 1
2sk3919 2sk3919-zk.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3919 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3919 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3919 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3919-ZK TO-252 (MP-3ZK) applications such as DC/DC co... See More ⇒
9.2. Size:193K toshiba
2sk3911.pdf
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII -MOSVI) 2SK3911 Switching Regulator Applications Unit mm Small gate charge Qg = 60 nC (typ.) Low drain-source ON resistance RDS (ON) = 0.22 (typ.) High forward transfer admittance Yfs = 11 S (typ.) Low leakage current IDSS = 500 A (VDS = 600 V) Enhancement model Vth = 2... See More ⇒
9.3. Size:160K nec
2sk3918.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3918 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3918 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3918 TO-251 (MP-3) characteristics, and designed for low voltage high current 2SK3918-ZK TO-252 (MP-3ZK) applications such as DC/DC co... See More ⇒
9.5. Size:207K fuji
2sk3915-01mr.pdf
2SK3915-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
9.6. Size:121K fuji
2sk3917-01mr.pdf
2SK3917-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
9.7. Size:206K fuji
2sk3916-01.pdf
2SK3916-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
9.8. Size:205K fuji
2sk3914-01.pdf
2SK3914-01 FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless... See More ⇒
9.9. Size:190K fuji
2sk3913-01mr.pdf
2SK3913-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Features Outline Drawings [mm] High speed switching Low on-resistance TO-220F No secondary breadown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unles... See More ⇒
9.10. Size:97K tysemi
2sk3919.pdf
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC Product specification 2SK3919 TO-252 Unit mm +0.1 6.50+0.15 2.30-0.1 -0.15 +0.8 5.30+0.2 0.50-0.7 -0.2 Features Low on-state resistance RDS(on)1 =5.6 m MAX. (VGS =10 V, ID =32 A) 0.127 Low Ciss Ciss = 2050 pF TYP. 0.80+0.1 max -0.1 5 V drive available 2.3 0.60+0.1 1Gate -0.1 +0.15 4.60-0.15 2Drain 3Source ... See More ⇒
9.11. Size:355K inchange semiconductor
2sk3918.pdf
isc N-Channel MOSFET Transistor 2SK3918 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.12. Size:287K inchange semiconductor
2sk3918-zk.pdf
isc N-Channel MOSFET Transistor 2SK3918-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
9.13. Size:280K inchange semiconductor
2sk3915-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3915-01MR FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
9.14. Size:286K inchange semiconductor
2sk3911.pdf
isc N-Channel MOSFET Transistor 2SK3911 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.32 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid... See More ⇒
9.15. Size:280K inchange semiconductor
2sk3917-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3917-01MR FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
9.16. Size:289K inchange semiconductor
2sk3916-01.pdf
isc N-Channel MOSFET Transistor 2SK3916-01 FEATURES Drain Current I = 4.3A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.6 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen... See More ⇒
9.17. Size:354K inchange semiconductor
2sk3919.pdf
isc N-Channel MOSFET Transistor 2SK3919 FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid ... See More ⇒
9.18. Size:286K inchange semiconductor
2sk3919-zk.pdf
isc N-Channel MOSFET Transistor 2SK3919-ZK FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 25V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno... See More ⇒
9.19. Size:289K inchange semiconductor
2sk3914-01.pdf
isc N-Channel MOSFET Transistor 2SK3914-01 FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi... See More ⇒
9.20. Size:280K inchange semiconductor
2sk3913-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3913-01MR FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.28 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol... See More ⇒
Detailed specifications: SK3841, SK3842, SK3849, SK3854, SK3866A, SK3867A, SK3899, SK3911, BC639, SK3931, SK3932, SK9132, SK9137, SK9138, SK9139, SK9142, SK9143
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